Features
- automatic component type identification
- automatic pinout identification
- special feature identification such as protection diodes and resistor shunts
- bipolar transistors: gain and leakage current measurements, silicon and germanium detection
- gate threshold measurement for Enhancement Mode MOSFETs
- semiconductor forward voltage measurement for diodes, LEDs and
transistor Base-Emitter junctions - automatic and manual power-off
Specifications
- Specification Summary at 20°C (68°F) unless otherwise specified
- peak test current into short circuit: -5.5 mA to 5.5 mA
- peak test voltage across open circuit: -5.1 V to 5.1 V
- transistor:
- gain range (Hfe): 4 – 65 000
- gain accuracy: ± 3% ± 5 Hfe
- Vceo test voltage: 2.0 V – 3.0 V
- Vbe accuracy: -2% -20 mV to +2% + 20 mV
- VBE for Darlington (shunted): 0.95 V – 1.80 V (0.75 V – 1.80 V)
- base-emitter shunt threshold: 50 kΩ – 70 kΩ
- BJT collector test current: 2.45 mA – 2.55 mA
- BJT acceptable leakage: 0.7 mA
- MOSFET:
- gate threshold range: 0.1 V – 5.0 V
- threshold accuracy: -2% -20 mV to +2% +20 mV
- drain test current: 2.45 mA – 255 mA
- gate resistance: 8 kΩ
- depletion drain test current: 4.5 mA
- JFET drain-source test current: 0.5 mA – 5.5 mA
- SCR/Triac:
- gate test current: 4.5 mA
- load test current: 5.0 mA
- diode:
- test current: 5.0 mA
- voltage accuracy: -2% -20 mV to +2% +20 mV
- Vf for LED identification: 1.50 V – 4.00 V
- short circuit threshold: 10 Ω
- battery:
- type: MN21 / L1028 / GP23A 12 V alkaline
- voltage range: 7.50 V – 12 V
- warning threshold: 8.25 V
- dimensions: 103 x 70 x 20 mm (4.1″ x 2.8″ x 0.8″)
- Weight per product (nett): 0.098kg (3.5oz)
- Operating temperature range: 0°C~50°C (32F ~ 122F)
